2SD1261 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type Darlington(For power amplification)

Power Transistors
2SD1261, 2SD1261A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB938 and 2SB938A
s ^Features
q High foward current transfer ratio h_FE
q High-speed switching
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1261
60
V_CBO
V
base voltage 2SD1261A
80
Collector to 2SD1261
60
V_CEO
V
emitter voltage 2SD1261A
80
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
8
A
Collector current
I_C
4
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff
2SD1261
current
2SD1261A
Collector cutoff
2SD1261
current
2SD1261A
Emitter cutoff current
Collector to emitter 2SD1261
voltage
2SD1261A
I_CBO
I_CEO
I_EBO
V_CEO
V_CB = 60V, I_E = 0
V_CB = 80V, I_E = 0
V_CE = 30V, I_B = 0
V_CE = 40V, I_B = 0
V_EB = 5V, I_C = 0
I_C = 30mA, I_B = 0
200
µA
200
500
µA
500
2
mA
60
V
80
Forward current transfer ratio
Base to emitter voltage
h_FE1
h_FE2*
V_BE
Collector to emitter saturation voltage V_CE(sat)
Transition frequency
f_T
Turn-on time
t_on
Storage time
t_stg
Fall time
t_f
*_{hFE2 Rank classification}
Rank
R
Q
P
V_CE = 3V, I_C = 0.5A
V_CE = 3V, I_C = 3A
V_CE = 3V, I_C = 3A
I_C = 3A, I_B = 12mA
I_C = 5A, I_B = 20mA
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 3A, I_B1 = 12mA, I_B2 = –12mA,
V_CC = 50V
Internal Connection
B
1000
1000
C
10000
2.5
V
2
V
4
20
MHz
0.5
µs
4
µs
1
µs
h_FE2 1000 to 2500 2000 to 5000 4000 to 10000
E
1