2SD1259 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SD1259, 2SD1259A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
s ^Features
q High foward current transfer ratio h_FE
q Satisfactory linearity of foward current transfer ratio h_FE
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1259
80
V_CBO
V
base voltage 2SD1259A
100
Collector to 2SD1259
60
emitter voltage 2SD1259A
V_CEO
80
V
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
6
A
Collector current
I_C
3
A
Base current
I_B
1
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1259
current
2SD1259A
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SD1259
voltage
2SD1259A
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
I_CES
I_CEO
I_EBO
V_CEO
h_FE*
V_CE(sat)
f_T
V_CE = 80V, I_E = 0
V_CE = 100V, I_E = 0
V_CE = 40V, I_B = 0
V_CB = 6V, I_C = 0
I_C = 25mA, I_B = 0
V_CE = 4V, I_C = 0.5A
I_C = 2A, I_B = 0.05A
V_CE = 12V, I_C = 0.2A, f = 10MHz
*_{hFE Rank classification}
Rank
Q
P
O
h_FE
500 to 1000 800 to 1500 1200 to 2500
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
typ
max Unit
100
µA
100
100
µA
100
µA
60
V
80
500
2500
1
V
50
MHz
Note: Ordering can be made by the common rank (PQ rank h_FE = 500 to 1500) in the rank classification.
1