2SD1258 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Power Transistors
2SD1258
Silicon NPN triple diffusion planar type
8.5±0.2
For power amplification with high forward current transfer ratio
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s ^Features
q High foward current transfer ratio h_FE
q Satisfactory linearity of foward current transfer ratio h_FE
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
200
V
Collector to emitter voltage V_CEO
150
V
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
2.5
A
Collector current
I_C
1
A
Base current
I_B
0.1
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
I_CBO
I_EBO
V_CEO
h_FE*
V_CE(sat)
f_T
V_CB = 200V, I_E = 0
V_EB = 6V, I_C = 0
I_C = 25mA, I_B = 0
V_CE = 4V, I_C = 0.2A
I_C = 0.5A, I_B = 0.02A
V_CE = 4V, I_C = 0.1A, f = 10MHz
*_{hFE Rank classification}
Rank
Q
P
h_FE
500 to 1200 800 to 2000
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
typ
max Unit
100
µA
100
µA
150
V
500
2000
1
V
25
MHz
Note: Ordering can be made by the common rank (PQ rank h_FE = 500 to 2000) in the rank classification.
1