2SD1252 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification)

Power Transistors
2SD1252, 2SD1252A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB929 and 2SB929A
s ^Features
q High forward current transfer ratio h_FE which has satisfactory linearity
q Low collector to emitter saturation voltage V_CE(sat)
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1252
60
V_CBO
V
base voltage 2SD1252A
80
Collector to 2SD1252
60
emitter voltage 2SD1252A
V_CEO
80
V
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
5
A
Collector current
I_C
3
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
35
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1252
current
2SD1252A
Collector cutoff
2SD1252
current
2SD1252A
Emitter cutoff current
Collector to emitter 2SD1252
voltage
2SD1252A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CES
I_CEO
I_EBO
V_CEO
h_FE1*
h_FE2
V_BE
V_CE(sat)
f_T
t_on
t_stg
t_f
V_CE = 60V, V_BE = 0
V_CE = 80V, V_BE = 0
V_CE = 30V, I_B = 0
V_CE = 60V, I_B = 0
V_EB = 6V, I_C = 0
I_C = 30mA, I_B = 0
V_CE = 4V, I_C = 1A
V_CE = 4V, I_C = 3A
V_CE = 4V, I_C = 3A
I_C = 3A, I_B = 0.375A
V_CE = 5V, I_C = 0.5A, f = 10MHz
I_C = 1A, I_B1 = 0.1A, I_B2 = – 0.1A,
V_CC = 50V
*_{hFE1 Rank classification}
Rank
R
Q
h_FE1
40 to 90 70 to 150
P
120 to 250
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
typ
max Unit
200
µA
200
300
µA
300
1
mA
60
V
80
40
250
10
1.8
V
1.2
V
30
MHz
0.5
µs
2.5
µs
0.4
µs
1