2SD1251 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion junction type(For power amplification)

Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s ^Features
q Wide area of safe operation (ASO)
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1251
60
V_CBO
V
base voltage 2SD1251A
80
Collector to 2SD1251
60
V_CEO
V
emitter voltage 2SD1251A
80
Emitter to base voltage
V_EBO
8
V
Peak collector current
I_CP
6
A
Collector current
I_C
4
A
Base current
I_B
1
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
30
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SD1251
voltage
2SD1251A
I_CBO
I_EBO
V_CEO(sus)*2
V_CB = 20V, I_E = 0
V_EB = 8V, I_C = 0
I_C = 0.2A, L = 25mH
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
h_FE1
h_FE2*1
V_BE
V_CE(sat)
f_T
V_CE = 3V, I_C = 0.1A
V_CE = 3V, I_C = 1A
V_CE = 3V, I_C = 1A
I_C = 2A, I_B = 0.4A
V_CE = 10V, I_C = 0.2A, f = 0.5MHz
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
typ
max Unit
30
µA
1
mA
60
V
80
40
30
160
1.2
V
1
V
1
MHz
*1_{hFE2 Rank classification}
Rank
Q
P
h_FE2
30 to 60 50 to 100
O
80 to 160
*2_{VCEO(sus) Test circuit}
50/60Hz mercury relay
120Ω
6V
1Ω
X ^IC(A)
L 25mH ^0.2
0.1
Y
15V
G
Note: Ordering can be made by the common rank (OP rank h_FE2 = 50 to 160) in the rank classification.
60/80
V_CE(V)
1