2SD1250 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power amplification)

Power Transistors
2SD1250, 2SD1250A
Silicon NPN triple diffusion planar type
For power amplification
For TV vartical deflection output
Complementary to 2SB928 and 2SB928A
s ^Features
q High forward current transfer ratio h_FE which has satisfactory linearity
q Low collector to emitter saturation voltage V_CE(sat)
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1250
200
V_CBO
V
base voltage 2SD1250A
200
Collector to 2SD1250
150
V_CEO
V
emitter voltage 2SD1250A
180
Emitter to base voltage
V_EBO
6
V
Peak collector current
I_CP
3
A
Collector current
I_C
2
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
30
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter 2SD1250
voltage
2SD1250A
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
I_CBO
I_EBO
V_CBO
V_CEO
V_EBO
h_FE1*
h_FE2
V_BE
V_CE(sat)
f_T
V_CB = 200V, I_E = 0
V_EB = 4V, I_C = 0
I_C = 500µA, I_E = 0
I_C = 5mA, I_B = 0
I_E = 500µA, I_C = 0
V_CE = 10V, I_C = 150mA
V_CE = 10V, I_C = 400mA
V_CE = 10V, I_C = 400mA
I_C = 500mA, I_B = 50mA
V_CE = 10V, I_C = 0.5A, f = 1MHz
*_{hFE1 Rank classification}
Rank
Q
P
h_FE1
60 to 140 100 to 240
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
typ
max Unit
50
µA
50
µA
200
V
150
V
180
6
V
60
240
50
1
V
1
V
20
MHz
1