2SD1198 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type darlington

Transistor
2SD1198, 2SD1198A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
s ^Features
q Forward current transfer ratio h_FE is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: h_FE
= 4000 to 40000.
q A shunt resistor is omitted from the driver.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
s ^{Absolute Maximum Ratings (Ta=25˚C)}
0.55±0.1
0.45±0.05
Parameter
Symbol
Ratings
Unit
Collector to 2SD1198
30
base voltage 2SD1198A
V_CBO
60
V
Collector to 2SD1198
25
emitter voltage 2SD1198A
V_CEO
50
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1.5
A
Collector current
I_C
1
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
s ^{Electrical Characteristics (Ta=25˚C)}
3
2
1
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
Internal Connection
C
B
≈200Ω _E
Parameter
Symbol
Conditions
Collector cutoff
current
2SD1198
2SD1198A ^ICBO
Emitter cutoff current
Collector to base 2SD1198
voltage
2SD1198A
I_EBO
V_CBO
V_CB = 25V, I_E = 0
V_CB = 45V, I_E = 0
V_EB = 4V, I_C = 0
I_C = 100µA, I_B = 0
Collector to emitter 2SD1198
voltage
2SD1198A ^VCEO
I_C = 1mA, I_B = 0
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
V_EBO
h_FE*1
V_CE(sat)
V_BE(sat)
f_T
I_E = 100µA, I_C = 0
V_CE = 10V, I_C = 1A^*2
I_C = 1A, I_B = 1mA^*2
I_C = 1A, I_B = 1mA^*2
V_CB = 10V, I_E = –50mA, f = 200MHz
*1_{hFE Rank classification}
Rank
Q
R
S
h_FE
4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
min
30
60
25
50
5
4000
typ max Unit
100
nA
100
100
nA
V
V
V
40000
1.8
V
2.2
V
150
MHz
*2 _{Pulse measurement}
1