2SD0966 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For Low-Frequency Amplification

Transistors
2SD0966 (2SD966)
Silicon NPN epitaxial planar type
For low-frequency amplification
For stroboscope
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• Satisfactory operation performances at high efficiency with the low-
voltage power supply.
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
40
V
Collector-emitter voltage (Base open) V_CEO
20
V
Emitter-base voltage (Collector open) V_EBO
7
V
Collector current
I_C
5
A
Peak collector current
I_CP
8
A
Collector power dissipation
P_C
1
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
0.45^{+–00..12}
0.45^{+–00..12}
(1.27)
(1.27)
1 : Emitter
123
2 : Collector
3 : Base
2.54±0.15
EIAJ : SC-51
TO-92L-A1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio ^*1
V_CEO
V_EBO
I_CBO
I_EBO
h_FE1 ^*2
I_C = 1 mA, I_B = 0
I_E = 10 µA, I_C = 0
V_CB = 10 V, I_E = 0
V_EB = 7 V, I_C = 0
V_CE = 2 V, I_C = 0.5 A
20
V
7
V
0.1
µA
0.1
µA
180
600

h_FE V_CE = 2 V, I_C = 2 A
150
Collector-emitter saturation voltage ^*1 V_CE(sat) I_C = 3 A, I_B = 0.1 A
1
V
Transition frequency
f_T
V_CB = 6 V, I_E = −50 mA, f = 200 MHz
150
MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 20 V, I_E = 0, f = 1 MHz
50
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*1: Pulse measurement
*2: ^{Rank classification}
Rank
P
Q
R
h_FE1
180 to 270 230 to 380 340 to 600
Publication date: April 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00201BED
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