2SC6036 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Transistors
2SC6036
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2162
 Features
 Low collector-emitter saturation voltage V_CE(sat)
 SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
15
V
V_CEO
12
V
V_EBO
5
V
I_C
500
mA
I_CP
1
A
P_C
100
mW
T_j
125
°C
T_stg –55 to +125 °C
0.33^{+−00..0052}
3
0.23^{+−00..0052}
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5°
Unit: mm
0.10^{+−00..0052}
1: Base
2: Emitter
3: Collecter
SSSMini3-F1 Package
Marking Symbol : 4U
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
V_CBO I_C = 10 µA, I_E = 0
15
V
Collector-emitter voltage (Base open)
V_CEO I_C = 1 mA, I_B = 0
12
V
Emitter-base voltage (Collector open)
V_EBO I_E = 10 µA, I_C = 0
5
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = 10 V, I_E = 0
0.1
µA
Forward current transfer ratio
h_FE V_CE = 2 V, I_C = 10 mA
270
680

Collector-emitter saturation voltage
V_CE(sat) I_C = 200 mA, I_B = 10 mA
250
mV
Transition frequency
f_T V_CB = 2 V, I_E = –10 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, f = 1 MHz
4.5
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date : December 2004
SJC00324AED
1