2SC5935 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SC5935
Silicon NPN triple diffusion planar type
For power amplification
For TV vertical deflection output
■ Features
• Satisfactory linearity of forward current transfer ratio h_FE
• Dielectric breakdown voltage of the package: 5 kV
• Full-pack package which can be installed to the heat sink with one
screw.
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
200
V
Collector-emitter voltage (Base open) V_CEO
180
V
Emitter-base voltage (Collector open) V_EBO
6
V
Collector current
I_C
2
A
Peak collector current
I_CP
3
A
Collector power
P_C
25
W
dissipation
T_a = 25°C
2.0
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
V_CBO
V_CEO
V_EBO
V_BE
I_CBO
I_EBO
h_FE1 ^*
h_FE2
V_CE(sat)
f_T
I_C = 50 µA, I_E = 0
I_C = 5 mA, I_B = 0
I_E = 500 µA, I_C = 0
V_CE = 10 V, I_C = 400 mA
V_CB = 200 V, I_E = 0
V_EB = 4 V, I_C = 0
V_CE = 10 V, I_C = 150 mA
V_CE = 10 V, I_C = 400 mA
I_C = 500 mA, I_B = 50 mA
V_CE = 10 V, I_C = 0.5 A, f = 1 MHz
200
V
180
V
6
V
1
V
50
µA
50
µA
60
240

50
1
V
20
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
P
h_FE1
60 to 140 100 to 240
Publication date: July 2004
SJD00318AED
1