2SC5829 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For High Speed Switching

Transistors
2SC5829
Silicon NPN epitaxial planar type
For high speed switching
■ Features
• Allowing the small current and low voltage operation
• High transition frequency f_T
• Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
10
V
Collector-emitter voltage (Base open) V_CEO
7
V
Emitter-base voltage (Collector open) V_EBO
2
V
Collector current
I_C
10
mA
Collector power dissipation
P_C
50
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
Unit: mm
3
2
1
1.00±0.05
0.39⁺−^00..0013
0.25±0.05
0.25±0.05
1
3
2
0.65±0.01
0.05±0.03
Marking Symbol: X
1: Base
2: Emitter
3: Collector
ML3-N2 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) I_CBO V_CB = 10 V, I_E = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = 1.5 V, I_C = 0
Forward current transfer ratio
h_FE V_CE = 1 V, I_C = 1 mA
Transition frequency
f_T
V_CE = 1 V, I_C = 1 mA, f = 0.8 GHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 1 V, I_E = 0, f = 1 MHz
1
µA
1
µA
100
200

4
GHz
0.4
pF
Forward transfer gain
Maximum unilateral power gain
Noise figure
S_21e²
G_UM
NF
V_CE = 1 V, I_C = 1 mA, f = 0.8 GHz
V_CE = 1 V, I_C = 1 mA, f = 0.8 GHz
V_CE = 1 V, I_C = 1 mA, f = 0.8 GHz
6
dB
15
dB
3.5
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
SJC00287AED
1