2SC5813 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Transistors
2SC5813
Silicon NPN epitaxial planar type
For DC-DC converter
■ Features
• Low collector-emitter saturation voltage V_CE(sat)
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
80
V
Collector-emitter voltage (Base open) V_CEO
80
V
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
1.5
A
Peak collector current
I_CP
3
A
Collector power dissipation ^*
P_C
600
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
Note) _*: Measure on the ceramic substrate at 15 mm × 15 mm × 0.6 mm
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
Marking Symbol: 5H
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
80
V
Collector-emitter voltage (Base open) V_CEO I_C = 1 mA, I_B = 0
80
V
Emitter-base voltage (Collector open) V_EBO I_E = 10 µA, I_C = 0
5
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = 40 V, I_E = 0
0.1
µA
Forward current transfer ratio ^*
h_FE V_CE = 2 V, I_C = 100 mA
200

Collector-emitter saturation voltage ^* V_CE(sat) I_C = 1 A, I_B = 20 mA
350 500 mV
Transition frequency
f_T
V_CB = 10 V, I_E = −50 mA, f = 200 MHz
180
MHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
15 25
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Pulse measurement
Publication date: December 2002
SJC00285BED
1