2SC5809 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SC5809
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
■ Features
• High-speed switching (Fall time t_f is short)
• High collector-base voltage (Emitter open) V_CBO
• Low collector-emitter saturation voltage V_CE(sat)
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
φ 3.2±0.1
1.4±0.2
1.6±0.2
2.6±0.1
0.8±0.1
0.55±0.15
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
800
V
Collector-emitter voltage (Base open) V_CEO
500
V
Emitter-base voltage (Collector open) V_EBO
8
V
Collector current
I_C
3
A
Peak collector current
I_CP
6
A
Collector power
T_C = 25°C P_C
30
W
dissipation
T_a = 25°C
2
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Marking Symbol: C5809
Internal Connection
C
B
E
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V_CEO
I_CBO
I_EBO
h_FE1
h_FE2
V_CE(sat)
f_T
t_on
t_stg
t_f
I_C = 10 mA, I_B = 0
V_CB = 800 V, I_E = 0
V_EB = 5 V, I_C = 0
V_CE = 5 V, I_C = 0.1 A
V_CE = 5 V, I_C = 3 A
I_C = 3 A, I_B = 0.6 A
V_CE = 10 V, I_C = 0.5 A, f = 1 MHz
I_C = 3.0 A, Resistance loaded
I_B1 = 0.6 A, I_B2 = − 0.6 A
V_CC = 200 V
500
V
100 µA
100 µA
15

8
0.3 0.6
V
8
MHz
1.1
µs
2.0
µs
0.3
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJD00291AED
1