2SC5739 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Power Transistors
2SC5739
Silicon NPN epitaxial planar type
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
■ Features
• High-speed switching (t_stg: storage time/t_f: fall time is short)
• Low collector-emitter saturation voltage V_CE(sat)
• Superior forward current transfer ratio h_FE linearity
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
60
V
Collector-emitter voltage (Base open) V_CEO
60
V
Emitter-base voltage (Collector open) V_EBO
6
V
Collector current
I_C
3
A
Peak collector current ^*
I_CP
6
A
Collector power dissipation
P_C
20
W
T_a = 25°C
2.0
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
Note) _*: Non-repetitive peak collector current
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V_CEO
I_CBO
I_CEO
I_EBO
h_FE1 ^*
h_FE2
V_CE(sat)
f_T
t_on
t_stg
t_f
I_C = 10 mA, I_B = 0
V_CB = 60 V, I_E = 0
V_CE = 60 V, I_B = 0
V_EB = 6 V, I_C = 0
V_CE = 4 V, I_C = 1 A
V_CE = 4 V, I_C = 3 A
I_C = 3 A, I_B = 0.375 A
V_CE = 10 V, I_C = 0.1 A, f = 10 MHz
I_C = 1 A, Resistance loaded
I_B1 = 0.1 A, I_B2 = − 0.1 A
V_CC = 50 V
60
V
100 µA
100 µA
1
mA
120
320

40
0.5
V
180
MHz
0.2 0.3
µs
0.55 0.70 µs
0.10 0.15 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
h_FE1
120 to 250 160 to 320
Publication date: February 2003
SJD00288AED
1