2SC5632 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Transistors
2SC5632
Silicon NPN epitaxial planar type
For high-frequency amplification and switching
■ Features
• High transition frequency f_T
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
15
V
Collector-emitter voltage (Base open) V_CEO
8
V
Emitter-base voltage (Collector open) V_EBO
3
V
Collector current
I_C
50
mA
Collector power dissipation
P_C
150
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
0.3^{+–00..01}
3
Unit: mm
0.15^{+–00..0150}
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 2R
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 100 µA, I_E = 0
15
V
Emitter-base cutoff current (Collector open) I_EBO V_EB = 2 V, I_C = 0
2
µA
Forward current transfer ratio
h_FE V_CE = 4 V, I_C = 2 mA
100
350

h_FE ratio ^*
∆h_FE h_FE2: V_CE = 4 V, I_C = 100 µA
0.6
1.5

h_FE1: V_CE = 4 V, I_C = 2 mA
Collector-emitter saturation voltage
V_CE(sat) I_C = 20 mA, I_B = 4 mA
0.1
V
Transition frequency
f_T
V_CE = 5 V, I_C = 15 mA, f = 200 MHz
0.6
1.1
GHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
1.0 1.6
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: ∆h_FE = h_FE2 / h_FE1
Publication date: February 2003
SJC00186BED
1