2SC5592 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For DC-DC converter)

Transistors
2SC5592
Silicon NPN epitaxial planer type
For DC-DC converter
For various driver circuits
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
I Features
• Low collector to emitter saturation voltage V_CE(sat) , large current
capacitance
• High-speed switching
• Mini type 3-pin package, allowing downsizing and thinning of the
equipment.
• Complementary pair with 2SA2010
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10°
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation ^*
Junction temperature
Storage temperature
V_CBO
15
V
V_CEO
15
V
V_EBO
5
V
I_CP
10
A
I_C
2.5
A
P_C
600
mW
T_j
150
°C
T_stg
−55 to +150
°C
Note) _*: Measure on the ceramic substrate at 15 × 15 × 0.6 mm³.
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol: 2T
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio ^*1
Collector to emitter saturation voltage ^*1
I_CBO
V_CBO
V_CEO
V_EBO
h_FE1
h_FE2
V_CE(sat)
Collector output capacitance
C_ob
Transition frequency
f_T
Turn-on time ^*2
t_on
Storage time ^*2
t_stg
Fall time ^*2
t_f
V_CB = 10 V, I_E = 0
I_C = 10 µA, I_E = 0
I_C = 1 mA, I_B = 0
I_E = 10 µA, I_C = 0
V_CE = 2 V, I_C = 100 mA
V_CE = 2 V, I_C = 2.5 A
I_C = 1 A, I_B = 10 mA
I_C = 2.5 A, I_B = 50 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
V_CB = 10 V, I_E = −50 mA
f = 200 MHz
Note) *1: Rank classification (≤ 1 ms)
*2: Refere to the measurement circuit.
Min Typ Max Unit
0.1 µA
15
V
15
V
5
V
400
1 000
280
110
mV
220 320 mV
30
pF
180
MHz
30
ns
100
ns
10
ns
1