2SC5591 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Power Transistors
2SC5591
Silicon NPN triple diffusion mesa type
For horizontal deflection output
I Features
• High breakdown voltage: 1 700 V; supporting a large screen CRT
and wider visible angle
• High-speed switching: t_f < 0.2 µs
• Low Collector to emitter saturation voltage: V_CE(sat) < 3 V
• Wide area of safe operation (ASO)
I Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
V_CBO
1 700
V
Collector to emitter voltage
V_CES
1 700
V
V_CEO
600
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
30
A
Collector current
I_C
20
A
Base current
I_B
11
A
Collector power ^TC ^{= 25°C}
P_C
70
W
dissipation
T_a = 25°C
3.5
Junction temperature
T_j
150
°C
Storage temperature
T_stg
−55 to +150
°C
15.5±0.5 _{φ 3.2±0.1}
Unit: mm
3.0±0.3
5˚
5˚
5˚
(4.0)
5˚
2.0±0.2
5˚
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5˚
12 3
1: Base
2: Collector
3: Emitter
TOP-3E Package
Marking Symbol: C5591
Internal Connection
C
B
E
I Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
t_stg
t_f
V_CB = 1 000 V, I_E = 0
V_CB = 1 700 V, I_E = 0
V_EB = 7 V, I_C = 0
V_CE = 5 V, I_C = 10 A
I_C = 10 A, I_B = 2.5 A
I_C = 10 A, I_B = 2.5 A
V_CE = 10 V, I_C = 0.1 A, f = 0.5 MHz
I_C = 10 A, Resistance loaded
I_B1 = 2.5 A, I_B2 = −5.0 A
Min Typ Max Unit
50
µA
1
mA
50
µA
6
12
3
V
1.5
V
3
MHz
3.0
µs
0.2
µs
1