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| 2SC5580 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency oscillation / switching) | |||
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Transistors
2SC5580
Silicon NPN epitaxial planer type
For high-frequency oscillation / switching
I Features
⢠High transition frequency fT
⢠S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
15
V
VCEO
8
V
VEBO
3
V
IC
50
mA
PC
150
mW
Tj
150
°C
Tstg
â55 to +150
°C
0.3+â00..01
3
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
Unit: mm
0.15+â00..0150
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S-Mini Type Package
Marking Symbol: 3R
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Emitter cutoff current
Collector to base voltage
Forward current transfer ratio
hFE ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
IEBO
VCBO
hFE
hFE(RATIO)
VCE(sat)
fT
Cob
VEB = 2 V, IC = 0
IC = 100 µA, IE = 0
VCE = 4 V, IC = 2 mA
VCE = 4 V, IC = 100 µA/2 mA
IC = 20 mA, IB = 4 mA
VCE = 5 V, IC = 15 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
2
µA
15
V
100
350
0.6
1.5
dB
0.5
V
0.6 1.1
GHz
1.2 1.6
pF
1
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