2SC5556 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For UHF Band Low-Noise Amplification

Transistors
2SC5556
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
• Low noise figure NF
• High transition frequency f_T
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
15
V
Collector-emitter voltage (Base open) V_CEO
10
V
Emitter-base voltage (Collector open) V_EBO
2
V
Collector current
I_C
80
mA
Collector power dissipation ^*
P_C
300
mW
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
Note) _*: Copper plate at the collector is more than 1 cm² in area, 1.0 mm in thickness
0.40^{+–00..0150}
3
Unit: mm
0.16^{+–00..0160}
1
2
(0.95) (0.95)
1.9±0.1
2.90^{+–00..0250}
10˚
Marking Symbol: 3K
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) V_CBO I_C = 10 µA, I_E = 0
15
V
Collector-emitter voltage (Base open) V_CEO I_C = 100 µA, I_B = 0
10
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = 10 V, I_E = 0
1
µA
Emitter-base cutoff current (Collector open) I_EBO V_EB = 2 V, I_C = 0
1
µA
Forward current transfer ratio
h_FE V_CE = 8 V, I_C = 20 mA
110
250

Transition frequency
f_T
V_CE = 8 V, I_C = 20 mA, f = 800 MHz
5
6
GHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
0.9 1.2
pF
Foward transfer gain
S_21e² V_CE = 8 V, I_C = 20 mA, f = 800 MHz
7.5 10.0
dB
Maximum unilateral power gain
G_UM V_CE = 8 V, I_C = 20 mA, f = 800 MHz
11.5
dB
Noise figure
NF V_CE = 8 V, I_C = 20 mA, f = 800 MHz
1.7
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
SJC00278BED
1