2SC5518 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Power Transistors
2SC5518
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s ^Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
1500
V
Collector to emitter voltage V_CES
1500
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
14
A
Collector current
I_C
7
A
Base current
I_B
3.5
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
15.5±0.5
φ3.2±0.1
3.0±0.3
5°
5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Collector cutoff current
I_CBO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Diode forward voltage
V_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
t_stg
t_f
V_F
Conditions
V_CB = 1000V, I_E = 0
V_CB = 1500V, I_E = 0
I_E = 500mA, I_C = 0
V_CE = 5V, I_C = 5A
I_C = 5A, I_B = 1A
I_C = 5A, I_B = 1A
V_CE = 10V, I_C = 0.1A, f = 0.5MHz
I_C = 5A, I_B1 = 1A, I_B2 = –2A
I_F = 5A
min
typ
max Unit
50
µA
1
mA
5
V
5
10
3
V
1.5
V
3
MHz
5.0
µs
0.5
µs
–2
V
1