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| 2SC5516 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type(For horizontal deflection output) | |||
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Power Transistors
2SC5516
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
1500
V
VCES
1500
V
Collector to emitter voltage
VCEO
600
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
30
A
Collector current
IC
20
A
Base current
IB
8
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
70
W
3.5
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
15.5±0.5
Ï3.2±0.1
3.0±0.3
5°
5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
1:Base
2:Collector
3:Emitter
TOPâ3E Full Pack Package
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 1000V, IE = 0
VCB = 1500V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 10A
IC = 10A, IB = 2.5A
IC = 10A, IB = 2.5A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 10A, IB1 = 2.5A, IB2 = â5.0A
min
typ
max Unit
50
µA
1
mA
50
µA
5
10
3
V
1.5
V
3
MHz
2.7
µs
0.2
µs
1
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