2SC5505 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

Power Transistors
2SC5505
Silicon NPN epitaxial planar type
For power amplification
■ Features
• High-speed switching
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■ Absolute Maximum Ratings T_C = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
60
V
Collector-emitter voltage (Base open) V_CEO
60
V
Emitter-base voltage (Collector open) V_EBO
5
V
Collector current
I_C
8
A
Peak collector current
I_CP
16
A
Collector power dissipation
P_C
20
W
T_a = 25°C
2.0
Junction temperature
T_j
150
°C
Storage temperature
T_stg −55 to +150 °C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
■ Electrical Characteristics T_C = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Turn-on time
Storage time
Fall time
V_CEO
I_CBO
I_CEO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
t_on
t_stg
t_f
I_C = 10 mA, I_B = 0
V_CB = 60 V, I_E = 0
V_CE = 60 V, I_B = 0
V_CE = 2 V, I_C = 1 A
V_CE = 2 V, I_C = 5 A
I_C = 5 A, I_B = 0.25 A
I_C = 5 A, I_B = 0.25 A
I_C = 4 A
I_B1 = 400 mA, I_B2 = −400 mA
V_CC = 50 V
60
V
100 µA
100 µA
80
280

50
1.2
V
1.7
V
0.2 0.5
µs
0.5 1.0
µs
0.10 0.15 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJD00287AED
1