2SC5473 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)

Transistor
2SC5473 (Tentative)
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
s ^Features
q High transition frequency f_T.
q High gain of 8.9dB and low noise of 1.8dB at 3V.
q Optimum for RF amplification of a portable telephone and
pager.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
2.1±0.1
0.425 1.25±0.10 0.425
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
9
V
Collector to emitter voltage V_CEO
6
V
Emitter to base voltage
V_EBO
1
V
Collector current
I_C
30
mA
Collector power dissipation P_C
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.2±0.1
1:Emitter
2:Collector
3:Emitter
4:Base
EIAJ:SC–82
S-Mini Type Package
Marking symbol : 3A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Noise figure
Foward transfer gain
Symbol
I_CBO
I_EBO
h_FE
C_ob
f_T
NF
| S_21e |²
Conditions
V_CB = 9V, I_E = 0
V_EB = 1V, I_C = 0
V_CE = 3V, I_C = 10mA
V_CB = 3V, I_E = 0, f = 1MHz
V_CE = 3V, I_C = 10mA, f = 2GHz
V_CE = 3V, I_C = 3mA, f = 1.5GHz
V_CE = 3V, I_C = 10mA, f = 2GHz
min
typ
max Unit
1
µA
1
µA
80
200
0.4
pF
12.0
GHz
1.8
dB
8.9
dB
1