2SC5472 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)

Transistors
2SC5472
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
I Features
• High transition frequency f_T
• High gain of 8.2 dB and low noise of 1.8 dB at 3 V
• Optimum for RF amplification of a portable telephone and pager
• S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
9
V
V_CEO
6
V
V_EBO
1
V
I_C
30
mA
P_C
150
mW
T_j
150
°C
T_stg
−55 to +150
°C
0.3^{+–00..01}
3
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
Unit: mm
0.15^{+–00..0150}
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S-Mini Type Package
Marking Symbol: 3A
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Forward transfer gain
Noise figure
I_CBO
I_EBO
h_FE
f_T
C_ob
| S_21e | ²
NF
V_CB = 9 V, I_E = 0
V_EB = 1 V, I_C = 0
V_CE = 3 V, I_C = 10 mA
V_CE = 3 V, I_C = 10 mA, f = 2 GHz
V_CB = 3 V, I_E = 0, f = 1 MHz
V_CE = 3 V, I_C = 10 mA, f = 2 GHz
V_CE = 3 V, I_C = 3 mA, f = 1.5 GHz
Min Typ Max Unit
1
µA
1
µA
80
200
12.0
GHz
0.6 0.9
pF
6.0 8.0
dB
1.8 3.0
dB
1