2SC5457 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
2SC5457
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
s ^Features
q High-speed switching
q High collector to base voltage V_CBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio h_FE
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
500
V
V_CES
500
V
Collector to emitter voltage
V_CEO
400
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
6
A
Collector current
I_C
3
A
Base current
I_B
1.2
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
30
W
1.0
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
0.93±0.1
1.0±0.1
0.1±0.05
0.5±0.1
2.3±0.1
4.6±0.1
0.75±0.1
1
2
3
6.5±0.2
5.35
4.35
1:Base
2:Collector
3:Emitter
U Type Package
Unit: mm
0.75
2.3 2.3
0.6
123
0.5±0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
I_CBO
V_CB = 500V, I_E = 0
I_EBO
V_EB = 5V, I_C = 0
100
µA
100
µA
Collector to emitter voltage
V_CEO
I_C = 10mA, I_B = 0
400
V
h_FE1
Forward current transfer ratio
h_FE2
V_CE = 5V, I_C = 0.1A
V_CE = 2V, I_C = 1.2A
10
8
40
Collector to emitter saturation voltage V_CE(sat)
I_C = 1.5A, I_B = 0.3A
1.0
V
Base to emitter saturation voltage V_BE(sat)
I_C = 1.5A, I_B = 0.3A
1.5
V
Transition frequency
Turn-on time
Storage time
Fall time
f_T
V_CE = 10V, I_C = 0.2A, f = 1MHz
t_on
I_C = 1.5A, I_B1 = 0.15A, I_B2 = – 0.3A,
t_stg
V_CC = 200V
t_f
10
MHz
1.0
µs
3.0
µs
0.3
µs
1