2SC5418 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – For horizontal deflection output

Power Transistors
2SC5418
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s ^Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
1700
V
Collector to emitter voltage
V_CES
1700
V
V_CEO
600
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
30
A
Collector current
I_C
20
A
Base current
I_B
10
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
100
W
3.5
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
15.5±0.5
φ3.2±0.1
3.0±0.3
5°
5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Collector cutoff current
I_CBO
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
t_stg
t_f
Conditions
V_CB = 1000V, I_E = 0
V_CB = 1700V, I_E = 0
V_EB = 5V, I_C = 0
V_CE = 5V, I_C = 10A
I_C = 10A, I_B = 2.8A
I_C = 10A, I_B = 2.8A
V_CE = 10V, I_C = 0.1A, f = 0.5MHz
I_C = 12A, I_B1 = 2.4A, I_B2 = –4.8A
min
typ
max Unit
50
µA
1
mA
50
µA
7
14
3
V
1.5
V
3
MHz
4.0
µs
0.3
µs
1