2SC5412 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type

Power Transistors
2SC5412
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s ^Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
1700
V
Collector to emitter voltage
V_CES
1700
V
V_CEO
600
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
8
A
Collector current
I_C
4
A
Base current
I_B
3
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
50
W
3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
15.5±0.5
φ3.2±0.1
3.0±0.3
5°
5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CBO
V_CB = 1000V, I_E = 0
V_CB = 1700V, I_E = 0
50
µA
1
mA
Emitter cutoff current
I_EBO
V_EB = 5V, I_C = 0
50
µA
Forward current transfer ratio
h_FE
V_CE = 5V, I_C = 2.5A
5
12
Collector to emitter saturation voltage V_CE(sat)
I_C = 2.5A, I_B = 625mA
3
V
Base to emitter saturation voltage V_BE(sat)
I_C = 2.5A, I_B = 625mA
1.5
V
Transition frequency
Storage time
Fall time
f_T
V_CE = 10V, I_C = 0.1A, f = 0.5MHz
t_stg
t_f
I_C = 2.5A, I_B1 = 625mA, I_B2 = 1.25A
3
MHz
4.0
µs
0.3
µs
1