2SC5392 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SC5392
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s ^Features
/ _{q High-speed switching}
q High collector to base voltage V_CBO
q Wide area of safe operation (ASO)
e _{q Satisfactory linearity of foward current transfer ratio hFE}
q Dielectric breakdown voltage of the package: > 5kV
nc ^{d . s Absolute Maximum Ratings (TC=25˚C)}
a ^{e tion Parameter}
Symbol
Ratings
Unit
a _{Collector to base voltage}
V_CBO
800
V
n ^{u form tml Collector to emitter voltage}
V_CES
800
V
in ^{.h VCEO}
500
V
st ^{ex Emitter to base voltage}
V_EBO
8
V
te ^{tin late -ind Peakcollectorcurrent}
I_CP
3.0
A
t _/e ^{Collector current}
I_C
u _{n Base current}
I_B
abo ^{ico Collector power TC=25°C}
in ^{n L m dissipation}
Ta=25°C
P_C
1.5
A
0.5
A
25
W
2.0
R _{/se Junction temperature}
T_j
150
˚C
a ^{o g U .jp Storage temperature}
T_stg
–55 to +150
˚C
c _{llowin ic.co s Electrical Characteristics (TC=25˚C)}
fo _{son Parameter}
Symbol
Conditions
M is _{isit na Collector cutoff current}
se ^{v ://pa Emitter cutoff current}
Collector to emitter voltage
D_{Plea http Forward current transfer ratio}
I_CBO
I_EBO
V_CEO
h_FE1
V_CB = 800V, I_E = 0
V_EB = 5V, I_C = 0
I_C = 10mA, I_B = 0
V_CE = 5V, I_C = 0.1A
Unit: mm
9.9±0.3
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.54±0.3
1 2 3 _5.08±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
min
typ
max Unit
100
µA
100
µA
500
V
15
h_FE2
V_CE = 5V, I_C = 0.6A
8
Collector to emitter saturation voltage V_CE(sat)
I_C = 0.6A, I_B = 0.17A
1.0
V
Base to emitter saturation voltage V_BE(sat)
I_C = 0.6A, I_B = 0.17A
1.5
V
Transition frequency
f_T
V_CE = 10V, I_C = 0.1A, f = 1MHz
20
MHz
Turn-on time
Storage time
Fall time
t_on
I_C = 0.6A, I_B1 = 0.17A, I_B2 = – 0.34A,
t_stg
t_f
V_CC = 200V
1.0
µs
3.0
µs
0.3
µs
1