2SC5379 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)

Transistor
2SC5379
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
s ^Features
q Low noise figure NF.
q High gain.
q High transition frequency f_T.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
15
V
Collector to emitter voltage V_CEO
8
V
Emitter to base voltage
V_EBO
2
V
Collector current
I_C
80
mA
Collector power dissipation P_C
125
mW
Junction temperature
T_j
125
˚C
Storage temperature
T_stg
–55 ~ +125
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : HT
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Noise figure
Symbol
I_CBO
I_EBO
h_FE*
f_T
C_ob
| S_21e |²
NF
Conditions
V_CB = 10V, I_E = 0
V_EB = 1V, I_C = 0
V_CE = 5V, I_C = 10mA
V_CE = 5V, I_C = 10mA, f = 2GHz
V_CB = 5V, I_E = 0, f = 1MHz
V_CE = 5V, I_C = 10mA, f = 1GHz
V_CE = 5V, I_C = 3mA, f = 1GHz
min
typ
max Unit
1
µA
1
µA
80
200
7.0
GHz
0.6
1.0
pF
8.5 11.0
dB
1.6
2
dB
*_{hFE Rank classification}
Rank
h_FE
Marking Symbol
Q
80 ~ 115
HTQ
R
95 ~ 155
HTR
S
135 ~ 200
HTS
1