2SC5295J Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For 2 GHz Band Low-Noise Amplification

Transistors
2SC5295J
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
■ Features
• High transition frequency f_T
• Low collector output capacitance (Common base, input open cir-
cuited) C_ob
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
15
V
Collector-emitter voltage (Base open) V_CEO
10
V
Emitter-base voltage (Collector open) V_EBO
2
V
Collector current
I_C
65
mA
Collector power dissipation
P_C
125
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
1.60^{+–00..0035}
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
5˚
Unit: mm
0.12^{+–00..0013}
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: 3S
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) I_CBO V_CB = 10 V, I_E = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = 1 V, I_C = 0
Forward current transfer ratio ^*
h_FE V_CE = 8 V, I_C = 20 mA
Transition frequency
f_T
V_CE = 8 V, I_C = 15 mA, f = 1.5 GHz
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
1
µA
1
µA
50
170

7.0 8.5
GHz
0.6 1.0
pF
Foward transfer gain
Maximum unilateral power gain
Noise figure
S_21e²
G_UM
NF
V_CE = 8 V, I_C = 15 mA, f = 1.5 GHz
V_CE = 8 V, I_C = 15 mA, f = 1.5 GHz
V_CE = 8 V, I_C = 7 mA, f = 1.5 GHz
7
9
dB
10
dB
2.2 3.0
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. _*: Rank classification
Rank
Q
R
h_FE
50 to 120 100 to 170
Publication date: December 2002
SJC00283BED
1