2SC5295 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For 2 GHz band low-noise amplification)

Transistors
2SC5295
Silicon NPN epitaxial planer type
For 2 GHz band low-noise amplification
I Features
• High transition frequency f_T
• Low collector output capacitance C_ob
• SS-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
I Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
15
V
V_CEO
10
V
V_EBO
2
V
I_C
65
mA
P_C
125
mW
T_j
125
°C
T_stg
−55 to +125
°C
0.2^{+–00..015}
3
Unit: mm
0.15^{+–00..015}
1
2
(0.5) (0.5)
1.0±0.1
1.6±0.1
5°
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SS-Mini Type Package (3-pin)
Marking Symbol: 3S
I Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio ^*
Transition frequency
Collector output capacitance
Forward transfer gain
Power gain
Noise figure
I_CBO
I_EBO
h_FE
f_T
C_ob
| S_21e | ²
GUM
NF
V_CB = 10 V, I_E = 0
V_EB = 1 V, I_C = 0
V_CE = 8 V, I_C = 20 mA
V_CE = 8 V, I_C = 15 mA, f = 1.5 GHz
V_CB = 10 V, I_E = 0, f = 1 MHz
V_CE = 8 V, I_C = 15 mA, f = 1.5 GHz
V_CE = 8 V, I_C = 15 mA, f = 1.5 GHz
V_CE = 8 V, I_C = 7 mA, f = 1.5 GHz
Note) *: Rank classification
Rank
Q
R
S
h_FE
50 to 120 100 to 170 150 to 300
Min Typ Max Unit
1
µA
1
µA
50
300
7.0 8.5
GHz
0.6 1.0
pF
7
9
dB
10
dB
2.2 3.0
dB
1