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| 2SC5270 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type(For horizontal deflection output) | |||
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Power Transistors
2SC5270, 2SC5270A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
s Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to 2SC5270
1500
VCBO
V
base voltage 2SC5270A
1600
Collector to 2SC5270
1500
VCES
V
base voltage 2SC5270A
1600
Collector to emitter voltage VCEO
600
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
20
A
Collector current
IC
12
A
Base current
IB
8
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
120
W
3
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
15.5±0.5
Ï3.2±0.1
3.0±0.3
5°
5°
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5°
5°
5°
5°
5.45±0.3
0.7±0.1
123
1:Base
2:Collector
3:Emitter
TOPâ3E Full Pack Package
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
2SC5270
Collector cutoff
current
2SC5270A
2SC5270
ICBO
2SC5270A
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 1000V, IE = 0
VCB = 1500V, IE = 0
VCB = 1600V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 6A
IC = 6A, IB = 1.5A
IC = 6A, IB = 1.5A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 6A, IB1 = 1.5A, IB2 = â3A
min
typ
max Unit
50
µA
50
1
mA
1
50
µA
5
12
3
V
1.5
V
3
MHz
1.5
2.5
µs
0.12
0.2
µs
1
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