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| 2SC5244 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type(For horizontal deflection output) | |||
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Power Transistors
2SC5244, 2SC5244A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
s Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to 2SC5244
1500
VCBO
V
base voltage 2SC5244A
1600
Collector to 2SC5244
1500
emitter voltage 2SC5244A
VCES
1600
V
Emitter to base voltage
VEBO
6
V
Peak collector current
ICP
20
A
Collector current
IC
30
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
200
W
3.5
Junction temperature
Storage temperature
Tj
150
ËC
Tstg
â55 to +150
ËC
20.0±0.5
Unit: mm
Ï 3.3±0.2
5.0±0.3
3.0
1.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
1.5
2.7±0.3
0.6±0.2
123
1:Base
2:Collector
3:Emitter
TOPâ3L Package
s Electrical Characteristics (TC=25ËC)
Parameter
Symbol
Conditions
Collector cutoff
2SC5244
current
2SC5244A
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
tstg
tf
VCB = 1500V, IE = 0
VCB = 1600V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 10A
IC = 10A, IB = 2.8A
IC = 10A, IB = 2.8A
VCE = 10V, IC = 0.1A, f = 0.5MHz
IC = 12A, IB1 = 2.4A, IB2 = â4.8A,
Resistance loaded
min
typ
max Unit
1
mA
1
50
µA
5
12
3
V
1.5
V
3
MHz
1.5
2.5
µs
0.12
0.2
µs
1
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