2SC5243 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Power Transistors
2SC5243
Silicon NPN triple diffusion mesa type
For horizontal deflection output
s ^Features
q High breakdown voltage, and high reliability through the use of a
glass passivation layer
q High-speed switching
q Wide area of safe operation (ASO)
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
1700
V
Collector to emitter voltage V_CES
1700
V
Emitter to base voltage
V_EBO
6
V
Collector current
I_C
15
A
Peak collector current
I_CP*
30
A
Peak base current
I_BP
10
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
200
W
3.5
Junction temperature
Storage temperature
*_{Non-repetitive peak}
T_j
150
˚C
T_stg
–55 to +150
˚C
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
1.5
2.7±0.3
0.6±0.2
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
t_stg
t_f
V_CB = 1700V, I_E = 0
V_EB = 5V, I_C = 0
V_CE = 5V, I_C = 10A
I_C = 10A, I_B = 2.8A
I_C = 10A, I_B = 2.8A
V_CE = 10V, I_C = 0.1A, f = 0.5MHz
I_C = 12A, I_B1 = 2.4A, I_B2 = –4.8A,
Resistance loaded
min
typ
max Unit
1
µA
50
µA
5
12
3
V
1.5
V
3
MHz
1.5
2.5
µs
0.12
0.2
µs
1