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| 2SC5223 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high-speed switching) | |||
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Power Transistors
2SC5223
Silicon NPN triple diffusion planar type
For high-speed switching
s Features
q High collector to base voltage VCBO
q High collector to emitter VCEO
s Absolute Maximum Ratings (Ta=25ËC)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage VCEO
500
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
2.0
A
Collector current
IC
1.0
A
Collector power dissipation (TC=25°C)
PC
10
W
Junction temperature
Tj
150
ËC
Storage temperature
Tstg
â55 to +150
ËC
s Electrical Characteristics (Ta=25ËC)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Symbol
ICBO
IEBO
VCBO
VCEO
VEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
Conditions
VCB = 400V, IE = 0
VEB = 5V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 50mA
VCE = 5V, IC = 330mA
IC = 330mA, IB = 33mA
IC = 330mA, IB = 33mA
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
0.93±0.1
1.0±0.1
0.1±0.05
0.5±0.1
2.3±0.1
4.6±0.1
0.75±0.1
1
2
3
6.5±0.2
5.35
4.35
1:Base
2:Collector
3:Emitter
U Type Package
Unit: mm
0.75
2.3 2.3
0.6
123
0.5±0.1
1:Base
2:Collector
3:Emitter
EIAJ:SCâ63
U Type Package (Z)
min
typ
max Unit
100
µA
10
µA
500
V
500
V
7
V
100
100
1.0
V
1.5
V
1
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