2SC5216 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)

Transistor
2SC5216
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
s ^Features
q High transition frequency f_T.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
15
V
Collector to emitter voltage V_CEO
8
V
Emitter to base voltage
V_EBO
3
V
Collector current
I_C
50
mA
Collector power dissipation P_C
200
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : FB
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Emitter cutoff current
Collector to base voltage
Forward current transfer ratio
I_EBO
V_CBO
h_FE
V_EB = 2V, I_C = 0
I_C = 100µA, I_E = 0
V_CE = 4V, I_C = 2mA
2
µA
15
V
100
350
Collector to emitter saturation voltage V_CE(sat)
I_C = 20mA, I_B = 4mA
0.5
V
Base to emitter voltage
Transition frequency
V_BE
V_CE = 4V, I_C = 2mA
0.7
V
f_T
V_CB = 10V, I_E = –15mA, f = 200MHz
0.8
1.3
1.9 GHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
0.6
1.0
1.4
pF
Common emitter reverse transfer capacitance C_rb
V_CB = 6V, I_E = 0, f = 1MHz
0.4
pF
Power gain
PG
V_CB = 10V, I_E = –10mA, f = 200MHz
14
18
22
dB
h_FE ratio
h_FE(RATIO)
V_CE = 4V, I_C = 100µA
V_CE = 4V, I_C = 2mA
0.6
1.5
1