2SC5145 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
2SC5145
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s ^Features
q High-speed switching
q High collector to base voltage V_CBO
q Wide area of safe operation (ASO)
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
800
V
V_CES
800
V
Collector to emitter voltage
V_CEO
500
V
Emitter to base voltage
V_EBO
8
V
Peak collector current
I_CP
10
A
Collector current
I_C
5
A
Base current
I_B
3
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_EBO
V_CEO(sus)*
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = 800V, I_E = 0
V_EB = 5V, I_C = 0
I_C = 0.2A, L = 25mH
V_CE = 5V, I_C = 0.1A
V_CE = 5V, I_C = 3A
I_C = 3A, I_B = 0.6A
I_C = 3A, I_B = 0.6A
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 3A, I_B1 = 0.6A, I_B2 = – 0.6A,
V_CC = 200V
*_{VCEO(sus) Test circuit}
50/60Hz
mercury relay
120Ω
6V
1Ω
X
L 25mH
Y
15V
G
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
typ
max Unit
100
µA
100
µA
500
V
15
8
1
V
1.5
V
8
MHz
1
µs
3
µs
1
µs
1