2SC5121 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type

Power Transistors
2SC5121
Silicon NPN triple diffusion planar type
For general amplification
s ^Features
q High collector to base voltage V_CBO
q High collector to emitter V_CEO
q Small collector output capacitance C_ob
q TO-126 package, which is fitted to a heat sink without any insu-
lation parts
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
400
V
Collector to emitter voltage V_CEO
400
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
100
mA
Collector current
I_C
70
mA
Collector power dissipation P_C
1.2
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
+0.5
8.0 –0.1
Unit: mm
3.2±0.2
φ3.16±0.1
0.75±0.1
0.5±0.1
0.5±0.1
1.76±0.1
4.6±0.2
2.3±0.2
123
1:Emitter
2:Collector
3:Base
JEDEC:TO–126(b)
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CBO
Hot I_CEO
V_CB = 300V, I_E = 0
V_CE = 380V, I_B = 0, Ta = 80°C
10
µA
10
µA
Collector to emitter voltage
V_CEO
I_C = 100µA, I_B = 0
400
V
Emitter to base voltage
V_EBO
I_E = 1µA, I_C = 0
7
V
Forward current transfer ratio
h_FE
V_CE = 10V, I_C = 5mA
30
150
Collector to emitter saturation voltage V_CE(sat)
I_C = 50mA, I_B = 5mA
1.2
V
Transition frequency
f_T
V_CB = 10V, I_E = –10mA, f = 200MHz
50
80
MHz
Collector output capacitance
C_ob
V_CB = 10V, I_E = 0, f = 1MHz
4
8
pF
1