2SC5077 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
2SC5077, 2SC5077A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s ^Features
q High-speed switching
q High collector to base voltage V_CBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio h_FE
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SC5077
800
base voltage 2SC5077A
V_CBO
900
V
Collector to 2SC5077
800
V_CES
V
emitter voltage 2SC5077A
900
Collector to emitter voltage V_CEO
500
V
Emitter to base voltage
V_EBO
8
V
Peak collector current
I_CP
15
A
Collector current
I_C
7
A
Base current
I_B
4
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
45
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
9.9±0.3
φ3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SC5077
current
2SC5077A
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_EBO
V_CEO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = 800V, I_E = 0
V_CB = 900V, I_E = 0
V_EB = 5V, I_C = 0
I_C = 10mA, I_B = 0
V_CE = 5V, I_C = 0.1A
V_CE = 5V, I_C = 4A
I_C = 4A, I_B = 0.8A
I_C = 4A, I_B = 0.8A
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 4A, I_B1 = 0.8A, I_B2 = –1.6A,
V_CC = 200V
min
typ
max Unit
100
µA
100
100
µA
500
µA
15
V
8
1.0
V
1.5
V
1.0 MHz
1.0
µs
3.0
µs
0.3
µs
1