2SC5063 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
2SC5063
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s ^Features
q High-speed switching
q High collector to base voltage V_CBO
q Wide area of safe operation (ASO)
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
500
V
V_CES
500
V
Collector to emitter voltage
V_CEO
400
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
3
A
Collector current
I_C
1.5
A
Base current
I_B
0.5
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
25
W
1.3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
I_CBO
I_EBO
V_CEO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
V_CB = 500V, I_E = 0
V_EB = 5V, I_C = 0
I_C = 10mA, I_B = 0
V_CE = 5V, I_C = 0.1A
V_CE = 5V, I_C = 0.8A
I_C = 0.8A, I_B = 0.16A
I_C = 0.8A, I_B = 0.16A
100
µA
100
µA
400
V
15
8
1
V
1.5
V
Transition frequency
Turn-on time
Storage time
Fall time
f_T
V_CE = 10V, I_C = 0.2A, f = 10MHz
t_on
t_stg
I_C = 0.8A, I_B1 = 0.16A, I_B2 = – 0.32A,
V_CC = 150V
t_f
25
MHz
0.7
µs
2
µs
0.3
µs
1