2SC5034 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
2SC5034
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s ^Features
q High collector to emitter V_CEO
q High-speed switching
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
500
V
V_CES
500
V
Collector to emitter voltage
V_CEO
400
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
15
A
Collector current
I_C
7
A
Base current
I_B
3
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
35
W
2.0
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
9.9±0.3
φ3.2±0.1
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_EBO
V_CEO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = 500V, I_E = 0
V_EB = 5V, I_C = 0
I_C = 10mA, I_B = 0
V_CE = 5V, I_C = 0.1A
V_CE = 5V, I_C = 3A
I_C = 3A, I_B = 0.6A
I_C = 3A, I_B = 0.6A
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 3A, I_B1 = 0.6A, I_B2 = –1.2A,
V_CC = 150V
min
typ
max Unit
100
µA
100
µA
400
V
10
8
1.0
V
1.5
V
10
MHz
1.0
µs
2.0
µs
0.3
µs
1