2SC5026 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency output amplification)

Transistor
2SC5026
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SA1890
Unit: mm
s ^Features
q Low collector to emitter saturation voltage V_CE(sat).
q High collector to emitter voltage V_CEO.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
80
V
Collector to emitter voltage V_CEO
80
V
Emitter to base voltage
V_EBO
5
V
Peak collector current
I_CP
1.5
A
Collector current
I_C
1
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 2A
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
I_CBO
V_CBO
V_CB = 40V, I_E = 0
I_C = 10µA, I_E = 0
0.1
µA
80
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
V_CEO
V_EBO
h_FE1*1
h_FE2
V_CE(sat)
V_BE(sat)
I_C = 1mA, I_B = 0
I_E = 10µA, I_C = 0
V_CE = 2V, I_C = 100mA
V_CE = 2V, I_C = 500mA^*2
I_C = 500mA, I_B = 50mA^*2
I_C = 500mA, I_B = 50mA^*2
80
V
5
V
120
340
60
0.15
0.3
V
0.85
1.2
V
Transition frequency
f_T
Collector output capacitance
C_ob
V_CB = 10V, I_E = –50mA, f = 200MHz
V_CB = 10V, I_E = 0, f = 1MHz
120
MHz
10
20
pF
*2 _{Pulse measurement}
*1_{hFE Rank classification}
Rank
R
S
h_FE1
120 ~ 240 170 ~ 340
1