2SC5019 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

Transistor
2SC5019
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
s ^Features
q Low noise figure NF.
q High gain.
q High transition frequency f_T.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
15
V
Collector to emitter voltage V_CEO
10
V
Emitter to base voltage
V_EBO
2
V
Collector current
I_C
80
mA
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : W
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
Symbol
I_CBO
I_EBO
V_CBO
V_CEO
h_FE
f_T
C_ob
| S_21e |²
GUM
NF
Conditions
V_CB = 10V, I_E = 0
V_EB = 2V, I_C = 0
I_C = 10µA, I_E = 0
I_C = 100µA, I_B = 0
V_CE = 8V, I_C = 20mA
V_CE = 8V, I_C = 20mA, f = 800MHz
V_CB = 10V, I_E = 0, f = 1MHz
V_CE = 8V, I_C = 20mA, f = 800MHz
V_CE = 8V, I_C = 20mA, f = 800MHz
V_CE = 8V, I_C = 20mA, f = 800MHz
min
typ
max Unit
1
µA
1
µA
15
V
10
V
80
250
5
6
GHz
0.9
1.2
pF
7.5
10
dB
11.5
dB
1.7
dB
1