2SC5018 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)

Transistor
2SC5018
Silicon NPN triple diffusion planer type
For high breakdown voltage high-speed switching
s ^Features
q High collector to base voltage V_CBO.
q High emitter to base voltage V_EBO.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
500
V
Collector to emitter voltage V_CEO
400
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
1.5
A
Collector current
I_C
0.8
A
Collector power dissipation P_C*
1
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
* _{Printed circuit board: Copper foil area of 1cm}2 _{or more, and the board}
thickness of 1.7mm for the collector portion
s ^{Electrical Characteristics (Ta=25˚C)}
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.65
max.
0.45^{+–00..105}
(HW type)
Parameter
Symbol
Conditions
min
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fill time
I_CBO
I_EBO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
t_on
t_stg
t_f
V_CB = 500V, I_E = 0
V_EB = 7V, I_C = 0
V_CE = 5V, I_C = 10mA
50
V_CE = 5V, I_C = 300mA^*1
10
I_C = 100mA, I_B = 10mA^*1
I_C = 100mA, I_B = 10mA^*1
V_CB = 10V, I_E = –50mA, f = 10MHz
I_C = 200mA, I_B1 = 40mA
I_B2 = –40mA, V_CC = 150V
typ max Unit
100
µA
100
µA
300
0.1
0.5
V
0.8
1.0
V
20
MHz
0.7
µs
4.0
µs
0.4
µs
*1 _{Pulse measurement}
1