2SC4985 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
2SC4985
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s ^Features
q High collector to base voltage V_CBO
q High collector to emitter V_CEO
q Allowing automatic insertion with radial taping
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
900
V
Collector to emitter voltage V_CEO
800
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
2
A
Collector current
I_C
1
A
Collector power dissipation P_C
1.5
W
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 to +150
˚C
7.5±0.2
Unit: mm
4.5±0.2
90°
0.65±0.1 0.85±0.1
0.7±0.1
1.0±0.1
0.7±0.1
0.8C
0.8C
2.5±0.2
0.8C
0.5±0.1
2.5±0.2
0.4±0.1
2.05±0.2
123
1:Emitter
2:Collector
3:Base
MT3 Type Package
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
I_CBO
I_EBO
V_CEO
V_CB = 900V, I_E = 0
V_EB = 7V, I_C = 0
I_C = 1mA, I_B = 0
50
µA
50
µA
800
V
Forward current transfer ratio
Collector to emitter saturation voltage
h_FE1
h_FE2
V_CE(sat)
V_CE = 5V, I_C = 50mA
V_CE = 5V, I_C = 500mA
I_C = 200mA, I_B = 40mA
6
3
1.5
V
Base to emitter saturation voltage V_BE(sat)
I_C = 200mA, I_B = 40mA
1
V
Transition frequency
Turn-on time
Storage time
Fall time
f_T
V_CB = 10V, I_E = –50mA, f = 200MHz
t_on
I_C = 200mA, I_B1 = 40mA, I_B2 = –80mA,
t_stg
V_CC = 250V
t_f
80
MHz
1
µs
3
µs
1
µs
1