2SC4960 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For power switching)

Power Transistors
2SC4960, 2SC4960A
Silicon NPN triple diffusion planar type
For power switching
s ^Features
q High-speed switching
q High collector to base voltage V_CBO
q Satisfactory linearity of foward current transfer ratio h_FE
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SC4960
900
base voltage 2SC4960A
V_CBO
900
V
Collector to emitter voltage V_CES
900
V
Collector to 2SC4960
800
emitter voltage 2SC4960A
V_CEO
900
V
Emitter to base voltage
V_EBO
7
V
Peak collector current
I_CP
2
A
Collector current
I_C
1
A
Base current
I_B
0.3
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
3
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
I_CBO
V_CB = 900V, I_E = 0
50
µA
Emitter cutoff current
I_EBO
V_EB = 7V, I_C = 0
50
µA
Collector to emitter 2SC4960
I_C = 1mA, I_B = 0
800
V_CEO
V
voltage
2SC4960A
I_C = 1mA, I_B = 0
900
h_FE1
V_CE = 5V, I_C = 0.05A
6
Forward current transfer ratio
h_FE2
V_CE = 5V, I_C = 0.5A
3
Collector to emitter saturation voltage V_CE(sat)
I_C = 0.2A, I_B = 0.04A
1.5
V
Base to emitter saturation voltage V_BE(sat)
I_C = 0.2A, I_B = 0.04A
1
V
Transition frequency
f_T
V_CE = 10V, I_C = 0.05A, f = 1MHz
4
MHz
Turn-on time
Storage time
Fall time
t_on
I_C = 0.2A, I_B1 = 0.04A, I_B2 = – 0.08A,
t_stg
V_CC = 250V
t_f
1
µs
3
µs
1
µs
1