2SC4898 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Power Transistors
2SC4898
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s ^Features
q High-speed switching
q High collector to base voltage V_CBO
q Low collector to emitter saturation voltage V_CE(sat)
s ^{Absolute Maximum Ratings (T}C^=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
1000
V
Collector to emitter voltage V_CEO
500
V
Peak collector current
I_CP
10
A
Collector current
I_C
5
A
Collector power T_C=25°C
dissipation
Ta=25°C
P_C
40
W
2
Junction temperature
Storage temperature
T_j
150
˚C
T_stg
–55 to +150
˚C
9.9±0.3
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.54±0.3
1 2 3 _5.08±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
s ^{Electrical Characteristics (T}C^=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
t_on
t_stg
t_f
V_CB = 1000V, I_E = 0
V_EB = 9V, I_C = 0
V_CE = 5V, I_C = 1A
I_C = 3A, I_B = 0.6A
V_CE = 10V, I_C = 0.5A, f = 1MHz
I_C = 3A, I_B1 = 0.6A, I_B2 = – 0.6A,
V_CC = 250V
min
typ
max Unit
100
µA
100
µA
20
40
1
V
8
MHz
1.5
µs
3
µs
1.0
µs
1