2SC4835 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

Transistor
2SC4835
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
s ^Features
q Low noise figure NF.
q High gain.
q High transition frequency f_T.
q S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
15
V
Collector to emitter voltage V_CEO
10
V
Emitter to base voltage
V_EBO
2
V
Collector current
I_C
80
mA
Collector power dissipation P_C
150
mW
Junction temperature
T_j
150
˚C
Storage temperature
T_stg
–55 ~ +150
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol : 3M
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Transition frequency
I_CBO
I_EBO
V_CBO
V_CEO
h_FE
f_T
V_CB = 10V, I_E = 0
1
µA
V_EB = 2V, I_C = 0
1
µA
I_C = 10µA, I_E = 0
15
V
I_C = 100µA, I_B = 0
10
V
V_CE = 8V, I_C = 20mA^*
50
150 200
V_CE = 8V, I_C = 15mA, f = 800MHz
5
6
GHz
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
C_ob
| S_21e |²
GUM
V_CB = 10V, I_E = 0, f = 1MHz
0.7
1.2
pF
V_CE = 8V, I_C = 15mA, f = 800MHz
11
14
dB
V_CE = 8V, I_C = 15mA, f = 800MHz
15
dB
Noise figure
NF
V_CE = 8V, I_C = 7mA, f = 800MHz
1.3
2
dB
* _{Pulse measurement}
1