2SC4809J Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For high-frequency amplification/oscillation/mixing

Transistors
2SC4809J
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
• High transition frequency f_T
• Small collector output capacitance (Common base, input open cir-
cuited) C_ob and reverse transfer capacitance (Common emitter) C_rb
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) V_CBO
15
V
Collector-emitter voltage (Base open) V_CEO
10
V
Emitter-base voltage (Collector open) V_EBO
3
V
Collector current
I_C
50
mA
Collector power dissipation
P_C
125
mW
Junction temperature
T_j
125
°C
Storage temperature
T_stg −55 to +125 °C
1.60^{+–00..0035}
1.00±0.05
3
12
0.27±0.02
(0.50)(0.50)
5˚
Unit : mm
0.12^{+–00..0013}
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: 1S
■ Electrical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
h_FE ratio ^*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V_CEO
V_EBO
I_CBO
h_FE
∆h_FE
V_CE(sat)
f_T
C_ob
I_C = 2 mA, I_B = 0
I_E = 10 µA, I_C = 0
V_CB = 10 V, I_E = 0
V_CE = 4 V, I_C = 5 mA
h_FE2: V_CE = 4 V, I_C = 100 µA
h_FE1: V_CE = 4 V, I_C = 5 mA
I_C = 20 mA, I_B = 4 mA
V_CB = 4 V, I_E = −5 mA, f = 200 MHz
V_CB = 4 V, I_E = 0, f = 1 MHz
10
V
3
V
1
µA
75
400

0.75
1.6

0.5
V
1.4 1.9 2.7 GHz
1.4
pF
Reverse transfer capacitance
(Common emitter)
C_rb V_CB = 4 V, I_E = 0, f = 1 MHz
0.45
pF
Collector-base parameter
r_bb' • C_C V_CB = 4 V, I_E = −5 mA, f = 31.9 MHz
11
ps
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * :∆h_FE = h_FE2 / h_FE1
Publication date: August 2003
SJC00303AED
1