2SC4808 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

Transistor
2SC4808
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
s ^Features
q Low noise figure NF.
q High gain.
q High transition frequency f_T.
q SSMini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
s ^{Absolute Maximum Ratings (Ta=25˚C)}
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V_CBO
15
V
Collector to emitter voltage V_CEO
10
V
Emitter to base voltage
V_EBO
2
V
Collector current
I_C
80
mA
Collector power dissipation P_C
125
mW
Junction temperature
T_j
125
˚C
Storage temperature
T_stg
–55 ~ +125
˚C
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : 3M
s ^{Electrical Characteristics (Ta=25˚C)}
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
I_CBO
I_EBO
V_CBO
V_CEO
h_FE
V_CB = 10V, I_E = 0
V_EB = 2V, I_C = 0
I_C = 10µA, I_E = 0
I_C = 100µA, I_B = 0
V_CE = 8V, I_C = 20mA^*
1
µA
1
µA
15
V
10
V
50
150 300
Transition frequency
Collector output capacitance
Foward transfer gain
f_T
C_ob
| S_21e |²
V_CE = 8V, I_C = 15mA, f = 800MHz
5
6
GHz
V_CB = 10V, I_E = 0, f = 1MHz
0.7
1.2
pF
V_CE = 8V, I_C = 15mA, f = 800MHz
11
14
dB
Maximum unilateral power gain
Noise figure
GUM
NF
V_CE = 8V, I_C = 15mA, f = 800MHz
V_CE = 8V, I_C = 7mA, f = 800MHz
15
dB
2
dB
* _{Pulse measurement}
1